SIR882BDP-T1-RE3

Vishay Siliconix

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SIR882BDP-T1-RE3

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Package:

PowerPAK® SO-8

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Description:

MOSFET N-CH 100V 16.5/67.5A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3762 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.3mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.3V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	5W (Ta), 83.3W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	16.5A (Ta), 67.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR882