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SIRA66DP-T1-GE3

Vishay Siliconix

제품 번호:

SIRA66DP-T1-GE3

제조업체:

Vishay Siliconix

패키지:

PowerPAK® SO-8

배치:

-

데이터 시트:

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설명:

MOSFET N-CH 30V 50A PPAK SO-8

수량:

배달:

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 2.3mOhm @ 15A, 10V
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.2V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 62.5W (Tc)
Series -
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRA66