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SIRS4600DP-T1-RE3

Vishay Siliconix

Product No:

SIRS4600DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

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Description:

N-CHANNEL 60 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.5625

    $3.5625

  • 10

    $2.9887

    $29.887

  • 100

    $2.41794

    $241.794

  • 500

    $2.14928

    $1074.64

  • 1000

    $1.840321

    $1840.321

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 7655 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 7.4W (Ta), 240W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 58A (Ta), 334A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)