SIS606BDN-T1-GE3

Vishay Siliconix

제품 번호:

SIS606BDN-T1-GE3

제조업체:

패키지:

PowerPAK® 1212-8

배치:

데이터 시트:

설명:

MOSFET N-CH 100V 9.4A/35.3A PPAK

수량:

배달:

지불:

재고 : 3000

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	17.4mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® 1212-8
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 35.3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIS606