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SQS966ENW-T1_GE3

Vishay Siliconix

제품 번호:

SQS966ENW-T1_GE3

제조업체:

Vishay Siliconix

패키지:

PowerPAK® 1212-8W Dual

배치:

-

데이터 시트:

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설명:

MOSFET N-CHAN 60V

수량:

배달:

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Mounting Type Surface Mount, Wettable Flank
Product Status Active
Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V
Supplier Device Package PowerPAK® 1212-8W Dual
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60V
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® 1212-8W Dual
Technology MOSFET (Metal Oxide)
Power - Max 27.8W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Package Tape & Reel (TR)
Base Product Number SQS966