TK10J80E,S1E

Toshiba Semiconductor and Storage

제품 번호:

TK10J80E,S1E

제조업체:

패키지:

TO-3P(N)

배치:

데이터 시트:

설명:

MOSFET N-CH 800V 10A TO3P

수량:

배달:

지불:

재고 : 15

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Supplier Device Package	TO-3P(N)
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	250W (Tc)
Series	π-MOSVIII
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK10J80