TP65H050G4BS

Transphorm

제품 번호:

TP65H050G4BS

제조업체:

패키지:

TO-263

배치:

데이터 시트:

설명:

650 V 34 A GAN FET

수량:

배달:

지불:

재고 : 388

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	4.8V @ 700µA
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	119W (Tc)
Series	SuperGaN®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	GaNFET (Gallium Nitride)
Mfr	Transphorm
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TP65H050