TSM60NB190CZ C0G

Taiwan Semiconductor Corporation

제품 번호:

TSM60NB190CZ C0G

제조업체:

패키지:

TO-220

배치:

데이터 시트:

설명:

MOSFET N-CHANNEL 600V 18A TO220

수량:

배달:

지불:

재고 : 3868

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1273 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	190mOhm @ 6A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	33.8W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM60