UT6ME5TCR

Rohm Semiconductor

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UT6ME5TCR

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Package:

HUML2020L8

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Description:

100V 2.0A/1.0A, DUAL NCH+PCH, DF

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Operating Temperature	150°C (TJ)
FET Feature	Standard
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 10V, 6.7nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Supplier Device Package	HUML2020L8
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	100V
Series	-
Package / Case	6-PowerUDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	2A (Ta), 1A (Ta)
Package	Tape & Reel (TR)