IPD180N10N3GATMA1

Infineon Technologies

제품 번호:

IPD180N10N3GATMA1

제조업체:

패키지:

PG-TO252-3

배치:

데이터 시트:

설명:

MOSFET N-CH 100V 43A TO252-3

수량:

배달:

지불:

재고 : 12240

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 33A, 10V
Supplier Device Package	PG-TO252-3
Vgs(th) (Max) @ Id	3.5V @ 33µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	71W (Tc)
Series	OptiMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPD180