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IRF630NSTRR

Infineon Technologies

제품 번호:

IRF630NSTRR

제조업체:

Infineon Technologies

패키지:

D2PAK

배치:

-

데이터 시트:

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설명:

MOSFET N-CH 200V 9.3A D2PAK

수량:

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V
Supplier Device Package D2PAK
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 82W (Tc)
Series HEXFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)