XPN12006NC,L1XHQ

Toshiba Semiconductor and Storage

제품 번호:

XPN12006NC,L1XHQ

제조업체:

패키지:

8-TSON Advance-WF (3.1x3.1)

배치:

데이터 시트:

설명:

MOSFET N-CH 60V 20A 8TSON

수량:

배달:

지불:

재고 : 10000

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

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Operating Temperature	-55°C ~ 175°C
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id	2.5V @ 200µA
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	65W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	20A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	XPN12006